unisonic technologies co., ltd 20n65 preliminary power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-r502-731.a 20a, 650v n-channel power mosfet ? description the utc 20n65 is an n-channel enhancement mode power mosfet using utc?s advanced tech nology to provide customers with planar stripe and dmos technology. this technology is specialized in allowing a minimu m on-state resistance and superior switching performance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 20n65 is universally applied in motor control, ups, dc choppers and switch-mode and resonant-mode power supplies. ? features * r ds(on) = 0.45 ? @v gs = 10 v * high switching speed ? symbol 1.gate 3.source 2.drain to-247 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 20n65l-t47-t 20N65G-T47-T to-247 g d s tube note: pin assignment: g: gate d: drain s: source
20n65 preliminary power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-731.a ? absolute maximum ratings (t c =25 , unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 650 v gate-source voltage v gss 30 v drain current (t c =25c) continuous i d 20 a pulsed i dm 80 a avalanche energy single pulsed(note 2) e as 1200 mj power dissipation (t c =25c) p d 300 w junction temperature t j +150 c storage temperature t stg -55~+150 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. v dd =50v, starting t j =25 , peak i as =20a, l=6mh ? thermal data parameter symbol ratings unit junction to case jc 0.42 / w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 650 v drain-source leakage current i dss v ds =650v, v gs =0v 10 a gate- source leakage current forward i gss v gs =+30v, v ds =0v +100 na reverse v gs =-30v, v ds =0v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs =10v, i d =10a, pulse test, t 300s, duty cycle d 2% 0.32 0.45 ? dynamic parameters input capacitance c iss v gs =0v, v ds =25v, f=1mhz 4500 pf output capacitance c oss 420 pf reverse transfer capacitance c rss 140 pf switching parameters total gate charge q g v gs =10v, v ds =520v, i d =10a (note 1, 2) 150 170 nc gate to source charge q gs 29 40 nc gate to drain charge q gd 60 85 nc turn-on delay time t d ( on ) v gs =10v, v ds =325v, i d =10a, r g =2 ? (note 1, 2) 20 40 ns rise time t r 43 60 ns turn-off delay time t d ( off ) 70 90 ns fall-time t f 40 60 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s v gs =0v 20 a maximum body-diode pulsed current i sm repetitive 80 a drain-source diode forward voltage v sd i f =i s , v gs =0v, pulse test, t 300s, duty cycle d 2% 1.5 v notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
20n65 preliminary power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-731.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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